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2SC3832
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3832 500 400 10 7(Pulse14) 2 50(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Switching Regulator and General Purpose
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=-0.5A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 50typ
(Ta=25C) 2SC3832 Unit
External Dimensions MT-25(TO220)
3.00.2 10.20.2 4.80.2 2.00.1
A A
V V MHz pF
2.5 12.0min 4.0max 16.00.7 8.80.2
a b
o3.750.2
V
1.35
0.65 +0.2 -0.1 2.5 BCE 1.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL () 66.7 IC (A) 3 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.3 IB2 (A) -0.6 ton (s) 1max tstg (s) 3max tf (s) 0.5max
Weight : Approx 2.6g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
7
0m
VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t)( V ) Base-Emitter Saturation Voltage V B E(s a t)( V ) (IC/I B= 5)
I C - VBE Temperature Characteristics (Typical)
7 (VCE=4V)
60 0m A
80
6
A
6 Collector Current I C (A) VBE(sat) 1
-55C (Cas e Temp)
mp)
)
as e 2 5 Tem p) C
400mA
Collector Current I C (A)
300mA
4
200mA
Tem
p)
e Te 25C (Cas
125C (Case
4
) emp se T 25C (Ca
Temp
125
C
2
2
12
5
C
V C E( sat) 0 0.02 0.05 0.1 0.5 1
-5
5
C
0
0
1
2
3
4
57
0
0
0.2
0.4
0.6
0.8
-55C
(C
(Cas
IB=100mA
(Ca
e Te
se
mp)
1.0
1.2
Collector-Emitter Voltage V C E( V)
Collector Current I C( A)
Base-Emittor Voltage V B E( V)
(VCE=4V) 50
j - a( C/W)
hFE - IC Characteristics (Typical)
10
t on *t stg * tf - IC Characteristics (Typical)
t on *t s t g*t f( s)
j-a - t Characteristics
4
DC Cur rent Gain h F E
25C
VCC 200V I C: I B1: -I B 2= 10:1:2 1 0.5 t on tf 0.1 0.2 0.5 1 5
-30 C
Transient Thermal Resistance
125 C
5
t s tg
Sw it ching Time
1
10
0.5 0.3
5 0.02
0.05
0.1
0.5
1
5
7
1
10 Time t(ms)
100
1000
Collector Current I C( A)
Collector Current I C( A)
Safe Operating Area (Single Pulse)
20
10
Reverse Bias Safe Operating Area
20 50
P c - T a Derating
M aximum Power Dissipa ti on P C( W)
10 5 Collect or Curr ent I C( A)
0
s
10 5 Collector Curren t I C( A)
40
W ith In fin
30
ite he at si
1
1 Without Heatsink Natural Cooling L=3mH -IB2=1A Duty:less than 1%
nk
20
0.5
Without Heatsink Natural Cooling
0.5
10 Without Heatsink 0 25 50 75 100 125 150
0.1 5 10 50 100 500 Collector-Emitter Voltage V C E( V)
0.1 5
10
50
100
500
2 0
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
72

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